Produkter> IR Empfänger> IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package
IR Phototransistor Duerch Lach 2-Pin Package

IR Phototransistor Duerch Lach 2-Pin Package

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    • Bezuelungsart: T/T,Paypal
    • Incoterm: FOB,EXW,FCA
    • Min. Uerdnung: 5000 Piece/Pieces
    • Transport: Ocean,Land,Air
    • Port: SHENZHEN
    Supply Fäegkeet & Zousätzlech Informatioun
    Additional Information

    VerpakungKartong Këscht

    Produktivitéit1000000000 pcs/week

    TransportOcean,Land,Air

    Place of OriginChina

    Kapazitéit liwweren7000000000 pcs/week

    CertificatGB/T19001-2008/ISO9001:2008

    HS Code8541401000

    PortSHENZHEN

    BezuelungsartT/T,Paypal

    IncotermFOB,EXW,FCA

    Produktattributer

    Model No.3106PT850D-A3

    MarkBeschte LED

    Liwweraque TypOriginal Hiersteller

    RefefeseformenInformatiounsblat

    SpezienLED

    PackageaartDuerch Hole

    CertificationOther

    UsageOther

    ApplicationElectronic Products

    Luminous IntensityHigh Directivity

    ColorOther

    FormationGold Thread

    TypeInfrared Led

    Inner PackingAnti-Static Bag

    PolarityShort Pin Mark Cathode

    Range Of Spectral Bandwidth700-1100nm

    Type Of LensBlack Lens

    Collector-Emitter Voltage30v

    Emitter-Collector Voltage5v

    Wavelenghth Of Peak Sensitivity850nm

    Package Quantity1000pcs/Bag

    Half Sensitivity Angle60degree

    1000PCS Weight200g

    Verpakung & Liwwerung
    Eenheeten ze verkafen: Piece/Pieces
    Package Typ: Kartong Këscht
    Company Video
    Typ duerch Loch LED als Reelstreif
    Produkt beschreiwung

    IR Receiver 3162PT850D-A3


    Wat ass den Ënnerscheed tëscht der Leeschtung vu Photodioden a Phototransistoren?

    1. Phototransistor kann als integréiert Struktur vun photodiode an Transistor considéréiert ginn. Seng Charakteristike sinn d'Ausgangscharakteristike vun der Photodiode an d'Charakteristike vum Transistor.
    2. Photodiodes kënnen als Spannungs- oder Stroumquelle benotzt ginn (dh Photovoltaikzellen) ouni zousätzlech Energieversuergung.
    3. De Phototransistor muss mat enger externer Energieversuergung bedriwwe ginn, sou datt e vill méi grouss Stroum wéi d'Fotodiode ausginn kann, well se vum Transistor verstäerkt ginn ass.

    850nm ir LED

    - Size: 

    - Chip Number: 1 chips

    - Color: 850nm 

    - Type: Black  clear

    - Chip brand: Tyntek

    - 60 degree

    - Different color are available

    - Different wavelength are available

    - Warranty: 5 Years

    - RoHS, REACH, EN62471

    - Uniform light output

    - Long life-solid state reliability

    - Low Power consumption

    -Anti UV epoxy resin package

    -High temperature resistance






    - Gréisst vun 3 mm IR Duerch-Loch LED -

    IR LED

    *Dëse Fall sinn och fir aner LED verfügbar, sou wéi: 5mm gréng duerch-Lach LED, UV LED, 660nm LED, 940nm LED, 5mm blo duerch-Lach LED, giel LED, Amber LED ect *

    - Aarbecht Duerch-Loch IR LED -

    PT850 led

    * Faarwen op der Foto goufe vun der Kamera gemaach, huelt w.e.g. déi aktuell Emissiounsfaarf als Standard.

    - Duerch-Loch IR LED Parameter -

    Parameter

    Symbol

    Min

    Typ

    Max

    Unit

    Test Condition

    Collector-Emitter Voltage

    VCEO

    30 V

    Emitter-Collector Voltage

    VECO

    5 V

    Collector Dark Current

    ICEO


    100

    nA

    VCE=20V

    Ee=0mw/cm2

    Collector-Emitter

    Breakdown Voltage

    Bvceo

    30

    100

    V

    ICBO=100uA

    Ee=0mw/cm2

    Emitter-Collector

    Breakdown Voltage

    Bvceo

    6


    V

    IECO=10uA

    Collector-Emitter

    Saturation Voltage

    VCE(sat)


    0.4

    V

    IC=2mA

    IB=100uA

    Ee=1mw/cm2

    Photocurrent 1

    IPCE

    30


    90

    uA

    Vce=5V

    Ee=1mw/cm2

    λP=850nm

    Photocurrent 2

    IPCE 90
    270 uA

    VCE=5V

    Ee=1mw/cm2

    λP=940nm

    Current gain

    hFE

    270


    900

    uA

    VCE=5V

    IC=2mA

    Wavelenghth of Peak Sensitivity

    λP 850


    nm


    Range of Spectral Bandwidth

    λ0.5

    400


    1100

    nm


    Response Time-Rise Time

    tR

    15

    us

    Vce=5v

    Ic=1mA

    RL=1000Ω

    Response Time-Fall Time

    tF
    15
    us

    Half Sensitivity angle

    △λ

    ±10

    deg

    Collector-base Capacitance

    CCB

    8 PF F=1MHz,VCB=3V

    - Golden Drot Verbindung -

    infrared led

    * Fir all LED laang Liewensdauer ze halen, BestLED Fabréck benotzt héich purem Golddrot fir bannenzeg Circuitverbindung

    - IR LED Verpackung -

    infrared LED packaged

    * Mir kënnen dës LED mat all Unzuel u Packagen packen an d'LED Pins wéi Är Noutwendegkeete geband oder biegen.

    - Zesummenhang Infrarout LED -

    IR LED

    - Produktioun Prozess -

    LED LAMP

    - Duerch-Loch IR LED -

    Through -hol led

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