 Produkter> IR Empfänger> 850nm IR LED Emitter Receiver Puer kleng Gréisst

850nm IR LED Emitter Receiver Puer kleng Gréisst

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Bezuelungsart: T/T,Paypal,Western Union
Incoterm: FOB,EXW,FCA
Min. Uerdnung: 5000 Piece/Pieces
Transport: Ocean,Land,Air
Port: SHENZHEN

Supply Fäegkeet & Zousätzlech Informatioun

Additional Information

Verpakung: Kartongskëscht

Produktivitéit: 1000000000 pcs/week

Transport: Ocean,Land,Air

Place of Origin: China

Kapazitéit liwweren: 7000000000 pcs/week

Certificat: GB/T19001-2008/ISO9001:2008

HS Code: 8541401000

Port: SHENZHEN

Bezuelungsart: T/T,Paypal,Western Union

Incoterm: FOB,EXW,FCA

Produktattributer

Model No.: 1206PT850D &1206IRC-85L

Mark: Bescht LED

Verpakung & Liwwerung

Eenheeten ze verkafen:	Piece/Pieces
Package Typ:	Kartongskëscht

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Produkt beschreiwung

- IR Empfänger -

1206PT850D & 1206IRC-85L

Et hunn zwou Aarte vu LED uewen, de wäissen ass den 850nm Infrarout LED Emitter an dee schwaarzen ass den IR Empfänger vun 850nm LED Top View Typ, deen och als 850nm Fotodiode benannt ka ginn. Am Circuit emitt 850nm LED Emitter d'Signal an da kritt den IR Empfänger en. Normalerweis gëtt den IR Empfänger als schwaarz Lens verpackt fir e puer extra Liicht ze filteren, wat ka sécher sinn datt et just d'Signal kritt dat mir brauchen. Fir IR Empfänger huet et och aner Form fir ze wielen, wéi 3mm Ronn Top, 5mm Ronn Top, 3528 SMD LED Typ Ect.

1206 smd led

- Size: 2.0*1.25*0.8mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: Epistar

- Polarity Mark

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

-Dimensiounsparameteren-

1206 smd ir 850nm size

1206 smd 850nm receiver size

Dës SMD LED Fall sinn och verfügbar fir IR LED, UV LED, Blue SMD LED, Red SMD LED, Amber LED ect.

- Ausstrahlend Faarf -

850nm IR LED 1206SMD

* Faarwen op der Foto goufe mat der Kamera gemaach, huelt w.e.g. déi tatsächlech Emittendefaarf als Standard.

- Elektresch Parameteren -

Absolut Maximal Bewäertungen Bei Ta = 25 ℃

Parameter	Symbol	Rating
Power Dissipation	Pd	50mW
Pulse Forward Current	IFP	100mA
Forward Current	IF	30mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	2Years
Antistatic bag	Piece	3000Back
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Optesch an Elektro Charakteristiken ( T c = 25 ℃ )

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Forward Voltage	VF	1.3		1.6	V	IF=30mA
Pulse Forward Voltage	VF		2.0		V	IFP=100mA
Radiant Intensity	IE	2.3		4.8	mw/sr	IF=30mA
Peak Wavelength	λP	845	850	858	nm	IF=30mA
Total Radiated Power	PO		3.2		mw	IF=30mA
Half Width	Dl		50		nm	IF=30mA
Viewing Half Angle	2q1/2		±70		deg	IF=30mA
Reverse Current	IR			5	uA	VR=5V
Rise Time	Tr		25		ns	IF=30mA
Fall Time	Tf		13		ns	IF=30mA
*Luminous Intensity is measured by ZWL600.
*q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

1206 smd Empfänger

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Collector-Emitter Voltage	VCEO			30	V
Emitter-Collector Voltage	VECO			5	V
Collector Dark Current	ICEO			30	nA	VCE=20V Ee=0mw/cm2
Collector Dark Current	ICEO			150	uA	VCE=70V Ee=0mw/cm2
On State Collector Current	IC(on)		0.7	4	mA	Ee=1mw/cm2 Vce=5v
Collector-Emitter Breakdown Voltage	Bvceo	85			V	ICBO=100uA Ee=0mw/cm2
Emitter-Collector Breakdown Voltage	Bvceo	8.2			V	IECO=10uA
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IC=2mA IB=100uA Ee=1mw/cm2
Photocurrent 1	IPCE	300		400	uA	Vce=5V Ee=1mw/cm2 λP=850nm
Photocurrent 2	IPCE	500		600	uA	VCE=5V Ee=1mw/cm2 λP=940nm
Current gain	hFE	200		3000	uA	VCE=5V IC=2mA
Wavelenghth of Peak Sensitivity	λP		850		nm
Range of Spectral Bandwidth	λ0.5	700		1100	nm
Response Time-Rise Time	tR		15		us	Vce=5v Ic=1mA RL=1000Ω
Response Time-Fall Time	tF		15		us	Vce=5v Ic=1mA RL=1000Ω
Half Sensitivity angle	△λ		±10		deg
Collector-base Capacitance	CCB			8	PF	F=1MHz,VCB=3V

- Golden Wire Connection -

* Fir all d'LED Liewensdauer ze halen, benotzt d'BestLED Fabréck héich reng Golddrot fir bannent Circuitverbindung

- Verpakung -

* Mir verpacken et mat Vakuumverpackung nom Band et als Spull

- Uwendung -

- Zesummenhang LED -

- Produktioun -

- Benotzt -

SMD LED Use of attention

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Category: IR Empfänger

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